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Ordering number : ENN7122
CPH3318
P-Channel Silicon MOSFET
CPH3318
Ultrahigh-Speed Switching Applications
Features
* * *
Package Dimensions
unit : mm 2152A
[CPH3318]
0.4 3 0.6 0.2 0.05 1.6 2.8 2.9 0.15
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
1 1.9
2
0.6
0.7 0.9
1 : Gate 2 : Source 3 : Drain SANYO : CPH3
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
0.2
Ratings --30 20 --1 --4 0.9 150 --55 to +150
Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0 VDS=--30V, VGS=0 VGS=16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--500mA ID=-500mA, VGS=-10V ID=-300mA, VGS=-4V Ratings min --30 --1 10 --1.2 0.57 0.82 420 720 550 1000 --2.6 typ max Unit V A A V S m m
Marking : JT
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3355 No.7122-1/4
CPH3318
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=-1A VDS=--10V, VGS=--10V, ID=-1A VDS=--10V, VGS=--10V, ID=-1A IS=--1A, VGS=0 Ratings min typ 75 16 9 6 4 12 4 2.6 0.5 0.5 --0.89 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 0V --10V VIN ID= --500mA RL=30 VDD= --15V
D
PW=10s D.C.1%
VOUT
G
CPH3318 P.G 50
S
--2.0
ID -- VDS
--1 0
--1.4
ID -- VGS
VDS= --10V
--
6V
V
Drain Current, ID -- A
Drain Current, ID -- A
--1.5
--8V
V --5
--1.2
--4V
--1.0
--0.8
--1.0
--0.6
--0.5
--0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 0 --0.5 --1.0 --1.5
--2.0
--2.5
25
--3.0
5C C --25C
VGS= --3V
--0.4
Ta= 7
--3.5
--4.0
Drain-to-Source Voltage, VDS -- V
1400
IT03310 1200
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT03311
RDS(on) -- Ta
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
1200
Static Drain-to-Source On-State Resistance, RDS(on) -- m
1000
1000
ID= --0.3A
--0.5A
800
--0 I D=
.
= --4 , VGS 3A
V
800
600
600
400
0.5 I D= --
= --10 A, V GS
V
400
200 0 --1
200
--2
--3
--4
--5
--6
--7
--8
--9
--10
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT03312
Ambient Temperature, Ta -- C
IT03313
No.7122-2/4
CPH3318
3
yfs -- ID
VDS= --10V
5 3 2
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
2
Forward Current, IF -- A
1.0 7 5
C 25 C -25 =Ta C 75
--1.0 7 5 3 2 --0.1 7 5 3 2
3 2
0.1 --0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Drain Current, ID -- A
100 7
IT03314 100 7 5
SW Time -- ID
Ciss, Coss, Crss -- VDS
Ciss
f=1MHz
Diode Forward Voltage, VSD -- V
Ta=75 C 25C --25C
IT03315
VDD= --15V VGS= --10V
Switching Time, SW Time -- ns
5
2
td(off)
10 7 5 3 2
Ciss, Coss, Crss -- pF
3
3 2
td(on)
tf
Coss
10 7
tr
Crss
1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3
5 0 --5 --10 --15 --20 --25 --30 IT03317
Drain Current, ID -- A
--10
IT03316 --10 7 5 3
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --1.0A
--8
IDP= --4A
Drain Current, ID -- A
2 --1.0 7 5 3 2 --0.1 7 5 3 2
ID= --1A
10
<10s 10 1m 0s s 10 ms
--6
DC
0m
s
op
era
--4
tio
n
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm)
2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
--2
0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT03318
--0.01 --0.1
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
M ou
Drain-to-Source Voltage, VDS -- V
IT03882
Allowable Power Dissipation, PD -- W
0.9 0.8
nt
ed
on
ac
0.6
er
am
ic
bo
ar
d(
0.4
90
0m
m2 !
0.
0.2
8m
m
)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT03879
No.7122-3/4
CPH3318
Note on usage : Since the CPH3318 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice.
PS No.7122-4/4

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